SPICE MODEL of 1MBC05D-06(Professional+FWD+SP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: 1MBC05D-060
MANUFACTURER: Fuji Electric
* REMARK: Free-Wheeling Diode (Special Model)
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
1

2. Transfer Characteristics
Circuit Simulation result
10A
8A
6A
4A
2A
0A
0V 4V 8V 12V 16V 20V
I(U1:C)
V_VGE
Evaluation circuit
U1 U2
1MBC05D-060 1MBC05D-060_SP
VCE
5Vdc
VGE
15Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
2

3. Comparison Graph
Simulation result
Comparison table
Test condition: VCE =5 (V)
VGE (V)
IC (A) %Error
Measurement Simulation
0.000 8.000 7.800 -2.50
2.800 10.000 9.944 -0.56
9.700 12.000 12.068 0.57
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
3

4. Fall Time Characteristics
Circuit Simulation result
5.0A
4.0A
3.0A
2.0A
1.0A
0A
2.0us 2.8us 3.6us 4.4us 5.2us 6.0us
I(RL)
Time
Evaluation circuit
U1
1MBC05D-060
RL
Rg U2 59.6
1MBC05D-060_SP
V1 = -15
V2 = 15 330
TD = 0 V1
TR = 10n VCE
TF = 10n 300Vdc
PW = 3u
PER = 20u
0
Test condition: IC=5 (A), VCC=300 (V)
Parameter Unit Measurement Simulation %Error
tf us 0.180 0.182 1.384
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
4

5. Gate Charge Characteristics
Circuit Simulation result
25V
20V
15V
10V
5V
0V
0 10n 20n 30n
V(W1:1)
Time*1mA
Evaluation circuit
V2
0
U1 I1
1MBC05D-060 D2
Dbreak 5
I1 = 0 W1 U2
I2 = 1m + 1MBC05D-060_SP
TF = 10n V3
TR = 10n -
TD = 0 I2 W
PER = 500m IOFF = 100uA 300
PW = 5m ION = 0A
0
Test condition: VCC=300 (V), IC=5 (A), VGE=15 (V)
Parameter Unit Measurement Simulation %Error
Qge nc 3.500 3.516 0.446
Qgc nc 8.000 7.995 -0.065
Qg nc 17.500 17.311 -1.080
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
5

6. Saturation Characteristics
Circuit Simulation result
10A
8A
6A
4A
2A
0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V
I(IC)
V(IC:-)
Evaluation circuit
U1 U2
1MBC05D-060 1MBC05D-060_SP
IC
0Adc
VGE
15Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
6

7. Comparison Graph
Simulation result
Comparison table
Test condition: VGE =15 (V)
VCE (V)
IC (A) %Error
Measurement Simulation
2.5 1.950 2.000 2.55
5.0 2.400 2.399 -0.03
10.0 3.200 3.199 -0.04
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
7

8. Output Characteristics
Circuit Simulation result
10A
VGE=20V 15V 12V
8A
6A
4A
10V
2A
8V
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(U1:C)
V_VCE
Evaluation circuit
U1 U2 VCE
1MBC05D-060 1MBC05D-060_SP 4Vdc
15Vdc VGE
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
8

9. FWD Forward Current Characteristics
Circuit Simulation result
10A
8A
6A
4A
2A
0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V
I(Vsense)
V(EC)
Evaluation circuit
Vsense
EC
V1
0Vdc
V2 U2 0Vdc
1MBC05D-060_SP
U1
1MBC05D-060
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
9

10. Comparison Graph
Simulation result
Comparison table
VF (V)
IF(A) %Error
Measurement Simulation
0.2 1.200 1.232 2.65
2 1.700 1.713 0.74
4 2.050 2.006 -2.16
6 2.300 2.262 -1.66
8 2.500 2.503 0.11
10 2.700 2.735 1.30
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
10

11. Reverse Recovery Characteristics
Circuit Simulation result
5.0A
4.0A
3.0A
2.0A
1.0A
0A
-1.0A
4.8us 5.2us 5.6us 6.0us 6.4us 6.8us
I(Vsense)
Time
Evaluation circuit
R1 Vsense
PARAMETERS:
V1 = -300V TR = 0.668u
59.7
V2 = 300V
TD = 5.15us U1
1MBC05D-060_SP
TR = {TR}
TF = 10n V1
VPULSE
PW = 10u
PER = 1ms
0
Test condition: VCC=300 (V), IC=5 (A), -di/dt=15 (A/us)
Parameter Unit Measurement Simulation %Error
trr nsec 140.000 140.137 0.10
Irr A 0.460 0.460 -0.01
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
11