GaN RF Market 2008

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GaN RF Market 2008
Published on July 2008

Report Summary

The need for high power, high frequency transistors is increasing steadily, commensurate with the huge demand for wireless
telecommunications. More power, more frequency bands, better linearity and improved efficiency are driving the current development
of RF semiconductor devices capable of handling all these specifications at a reasonable price.

Up to 2005, Si LDMOS covered about 90% of the high power RF amplification applications in the 2GHz and higher frequency range;
the 10% remaining market share was addressed by GaAs pHEMT technology. This equilibrium is soon to be upset considerably by
the introduction of Gallium Nitride (GaN) HEMT technology.

These GaN devices are now challenging the dominant position of silicon in an industrial playground in which a Power Amplifier (PA)
market size of ~$900M is forecast for 2008.

Military applications were the first to use WBG devices, especially with the SiC MESFET being developed through broadly financed
DARPA and DoD programs in the US. Then in 2006, Eudyna jointly announced with NTT that a first 3G network using GaN HEMT
had been deployed in Tokyo for test purposes. New commercial offerings from CREE, RFMD and Nitronex followed, targeting both
base-station (3G, WiMAX...) and general purpose applications. In parallel, R&D for space applications remains very strong and the
first products are expected to be implemented in the next few years. Recent announcements show that key players are more and
more focusing on WiMAX/LTE markets, defocussing on the current 3G/3G+ market for which they claim the time-to-market for WBG
devices is now over. With strong penetration of WiMAX/LTE applications, we forecast that the market size for GaN RF transistors
could reach a level of about $100m by 2010. The duality between WiMAX and LTE technologies should not widely impact this growth.
The battle will take place not only at a performance and reliability level but also at the cost level. Thus, innovative GaN-based
substrate makers have a great role to play to help decrease device prices.

This report provides a complete analysis of the applications targeted by GaN RF transistors with its key market metrics. It describes
the main devices in production or under development as well as the possible alternative substrates that will help to decrease the
device price.

Table of Content

Table of content

Glossary
Executive summary
Latest noteworthy news
2007 noteworthy news
2006 noteworthy news

GaN RF device market analysis p12

GaN RF Market 2008 (From Slideshare) Page 1/7


Possible applications for GaN devices in RF electronic systems
GaN device applications roadmap. Time to market
Technology drivers and FOM for GaN: High Frequency, High Power and Linearity
GaN RF device market breakdown. 2007 - 2012 comparison
2005-2012 GaN RF device market size. Nominal scenario
2005-2012 GaN RF device market size. Table of data: units / ASP / revenues
2005-2012 GaN RF device market size Alternative pessimistic scenario
Analysis of the 2 scenarios. What can we trust in''
4' epi-wafer needs for GaN-based RF devices market 2005-2012
Tentative forecast for RF GaN epiwafer market size 2005-2012
Conclusions and perspectives

GaN HEMT state of the art p24

GaN and Silicon FET structure comparison
GaN / SiC / Si / GaAs high power RF transistors comparison
Microwave frequencies bands. Comparison of Si, SiGe, GaAs, InP and GaN frequency and Vb ranges
GaN FET state-of-the-art: Company / Technology / Pmax / Gain / Fmax / PAE / Vds / Gate width
Latest GaN RF HEMT results Example of IMEC HEMT GaN/Si
Examples of RFMD offer in GaN HEMT (S.I. SiC)
Examples of Eudyna offer in GaN HEMT (S.I. SiC)
Examples of CREE offer in GaN HEMT & SiC MESFET
Examples of Nitronex offer for GaN HEMT (GaN-on-Silicon)
Cost breakdown of HEMT process: GaN/SiC (3')
Cost breakdown of HEMT process: GaN/Si (4')
GaN FET commercialization status & announcements

GaN RF device industrial landscape p39

Food chain & players in GaN RF business (R&D or production)
Industrial supply-chain in the US
Industrial supply-chain in Europe
Industrial supply-chain in Asia
Origin of the companies now involved in GaN technology
Strategy of Si LDMOS companies over the GaN technology

Wireless phone infrastructures: Base stations (BTS) market p46

Market drivers of the GaN for BTS
Remote radio head (RRH) antenna
Recent announcements in GaN-based technologies for 3G BTS market
Wireless-phone infrastructure market shares in 2007
Si LDMOS vs. GaAs pHEMT 2007 status
Market shares of Si LDMOS vendors for wireless infrastructure in 2007
WCDMA BTS typical cost distribution
Wireless phone base-station price analysis (GSM vs. 3G)
Base stations: 2007 value-chain analysis
2005-2012 mobile-phone subscribers in units and AGR (%)



Worldwide deployed macro cellular base-stations 2005-2012 by standards
Components currently used in base stations
Estimation of total accessible market for GaN FET in 3G BTS
Number of 4' equivalent wafers to be produced for GaN FET manufacturing for 3G base stations market (Conservative scenario)
Number of 4' equivalent wafers to be produced for GaN devices manufacturing for 3G base stations market (Breakthrough
scenario)

Defense market p63

Market drivers of GaN RF electronics in defense applications
Focus on defense applications Worldwide estimation of the Total Accessible Market (TAM) for wide Bandgap RF transistors
Roadmap for RF transistors volumes in defense applications
4' equivalent wafers needs in units for GaN MMIC manufacturing for defense market
On-going R&D programs in the US for GaN in defense applications
Example of US DARPA requests: Wide Band Gap Semiconductors for RF Applications (WBGS-RF)
On-going R&D programs in Europe for GaN in defense applications: Korrigan

Satellite market p71

Market drivers of the GaN electronics in SatCom

V-SAT terminals market p73

Market drivers of GaN electronics in V-SAT
V-SAT market data
GaN HEMT opportunities for V-SAT Estimated 4' wafers annual needs

CATV market p77

Market drivers of GaN electronics in CATV
CATV market data
GaN HEMT opportunities for CATV. Estimated device volume and 4' epi-wafer needs

WiMAX vs. LTE. The race toward 4G has already started' p81

WiMAX & LTE history and definition
Positioning of WiMAX & LTE over the data rate and the mobility range
WiMAX / LTE technical comparison
WiMAX vs. LTE Current positioning of key companies
WiMAX and LTE deployment planning
WiMAX technology
WiMAX standards
WiMAX profiles/spectrum bands
WiMAX network requirements
WiMAX market trends
WiMAX players
WiMAX players : a complex food chain
WiMAX market estimation 2005-2012 subscribers projection



Market drivers for GaN in WiMAX
What will be the best GaN substrate for base station application ' Si or SiC
Tentative market estimation for WiMAX BTS and related PA & RF transistors market
2005-2012 worldwide annual volume and related sales for WiMAX BTS infrastructures
2005-2012 annual production of GaN 4' wafers for WiMAX BTS infrastructures
Conclusions: How WiMAX vs. LTE and related frequency spectrum choices will impact the GaN RF market'

GaN RF devices. European developments p102

European industrial food chain
Korrigan : the key R&D GaN military project in Europe
HYPHEN: Hybrid Substrates for Competitive HF Electronics
GaN-Switchmode: GaN HEMT for base stations
Power RF foundries in Europe

GaN RF devices. Japanese developments p109

Japanese NEDO R&D programs

GaN material. Current developments p113

Direct growth or buffer approach
Composite substrates: wafer bonding approach
Picogiga ' SOITEC (F). SopSiC (Silicon on Poly-SiC) substrate
Aonex Technologies, now AmberWave Systems (US) A-Sapph & A-GaN
BluGlass. GaN on Glass
IMEC (B). GaN on Germanium. Ge (111)
IMEC (B). GaN on Silicon
Azzurro Semiconductors (D). GaN on Silicon
Covalent Materials (J). GaN on Silicon (with 3C-SiC buffer layer)
Nitronex (US). GaN on Silicon
TDI, now Oxford Instruments (US). GaN/SiC and GaN/Sapphire
Hitachi Cable (J). GaN/SI.I SiC and GaN/Sapphire
Cermet (US). GaN on ZnO
SOD: Silicon On Diamond. Main advantages for GaN growth (1/2)
Group4 Lab (US). GaN/Diamond. Double wafer bonding approach
sp3 Diamond Technology (US). DOS (Diamond on Si) & SOD
Bulk / free-standing GaN wafers status
GaN / Silicon epiwafer manufacturers status
GaN/Sapphire & GaN/SiC epiwafer manufacturers status
Examples of current GaN material pricing

Main metrics of the SiC and Sapphire substrate markets p137

Main SiC material manufacturing site locations. Bulk or epi-foundry
Material polytypes, doping & orientation commercially available
2006 & 2007 SiC substrate vendor revenues & related market share. Focus on S.I. SiC market
Diameter evolution for semi-insulating SiC substrates to 2012



2005-2012 S.I. SiC substrates price evolution for various diameters
Map of sapphire suppliers location ' 2007 Total sapphire vendor revenues (split by Optics & Electronics)
2005-2012 sapphire substrate price projection, split by diameter

Review of the main GaN RF devices in production or in development: (Device structure, Main specs, Reliability, ')
p146 -> 214

CREE
Eudyna
Freescale
Fujitsu
KOPIN
Matsushita MEI / Panasonic
NEC
Nitronex
OKI
RFMD
TriQuint
Toshiba
UCSB


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