SlideShare uma empresa Scribd logo
1 de 4
Baixar para ler offline
CTU: EE 375 – Electronics 1: Lab 3: BJT Amplifier                                                                                   1


                                      Colorado Technical University
                                         EE 375 – Electronics 1
                                          Lab 3: BJT Amplifier
                                              March 2010
                                                L. Schwappach and C. Fresch
          ABSTRACT: This lab report was completed as a course requirement to obtain full course credit in EE375, Electronics 1 at
Colorado Technical University. This lab report examines the Bipolar Junction Transistors Amplifiers. This device is used in many
applications such as amplifying and switching. This lab will focus on the gain, input/output resistance and the frequency bandwidth
using a common emitter circuit. In particular how to achieve a gain of 7 with the selected load resistance of 10kohm and how to obtain
the Re, Rc,R1,and R2.

         If you have any questions or concerns in regards to this laboratory assignment, this laboratory report, the process used in
designing the indicated circuitry, or the final conclusions and recommendations derived, please send an email to
LSchwappach@yahoo.com or cfresch24@comcast.net. All computer drawn figures and pictures used in this report are of original and
authentic content. The authors authorize the use of any and all content included in this report for academic use.

                                                                    collector, and so BJTs are classified as minority-carrier
                                                                    devices.
                      I. INTRODUCTION                                         The proportion of electrons able to cross the base and
                                                                    reach the collector is a measure of the BJT efficiency. The
         T    HE Bipolar-Junction-Transistors-Amplifiers are
              active devices used in many applications such as      heavy doping of the emitter region and light doping of the
                                                                    base region cause many more electrons to be injected from the
switching and amplifying and etc. The DC biasing determines
the operating point of the device and its performance               emitter into the base than holes to be injected from the base
characteristics. The BJT transistor structure contains three        into the emitter. The common-emitter current gain is
regions, the emitter, base and collector. The objective of this     represented by β; it is approximately the ratio of the DC
lab is to design and gain a understanding of how an amplifier       collector current to the DC base current in forward-active
can be built by using a BJT.                                        region. It is typically greater than 100 for small-signal
                                                                    transistors but can be smaller in transistors designed for high-
                                                                    power applications. Another important parameter is the
                      II. OBJECTIVES                                common-base current gain, α. The common-base current gain
                                                                    is approximately the gain of current from emitter to collector
         The objective of this lab is to design and gain an
                                                                    in the forward-active region. This ratio usually has a value
understanding of the physical structure, operation, and
                                                                    close to unity; between 0.98 and 0.998. Alpha and beta are
characteristics of the bipolar junction transistors (BJT). In
                                                                    more precisely related by the following identities (NPN
particular how to determine the gain, input resistance, output
                                                                    transistor):
resistance, and the frequency bandwidth of the amplifier by
simulation, hand calculations, actual measurement. The last
objective is to recognize the discrepancies between the three
and why they may differ from each-other.

                     III. DIODE THEORY
         A bipolar (junction) transistor (BJT) is a three-
terminal electronic device constructed of doped semiconductor
material and may be used in amplifying or switching
applications. Bipolar transistors are so named because their
operation involves both electrons and holes. Charge flow in a
BJT is due to bidirectional diffusion of charge carriers across a               IV. DESIGN APPROACHES/TRADE-OFFS
junction between two regions of different charge                              The performance of this lab will depend on how well
concentrations. This mode of operation is contrasted with           the circuit is developed. If the circuit is developed correctly
unipolar transistors, such as field-effect transistors, in which    the results should be similar to the simulation results that were
only one carrier type is involved in charge flow due to drift.      obtained by PSpice and the hand calculations (analysis). The
By design, most of the BJT collector current is due to the flow     performance of the lab also depends on how well the
of charges injected from a high-concentration emitter into the      equipment is calibrated and accurate the components tolerance
base where they are minority carriers that diffuse toward the       is.
CTU: EE 375 – Electronics 1: Lab 3: BJT Amplifier                                                                                 2

         This is not a very cost effective lab except for the                        VI. CIRCUIT SCHEMATICS
development and time it took to construct the lab components.               The circuit schematics below were built in PSpice
But to save money for a lab project, whether it’s the testing or   and allowed our team to analyze the circuit digitally before
developing phase of a new design, depending on what the            performing the physical build.
schematic is, a circuit can be reduced, if done correctly.
                                                                       Figure 1: BJT LT-Spice diagram showing Common
                                                                               Emitter Circuit for EE-375 Lab #3
                V.       HAND CALCULATIONS
         The hand calculations used for this lab (See figure 1)
can be found below.

         Equations:
         -Rc||Rl/Re = Av
         Ri = R1||R2||Rib
         Rib = Rpi + (1+Beta)Re
         Rpi = Beta(Vt)/Icq

         AV = 7, choose Re = 1kohms

         7 = Rc||RL/Re
         7 = Rc||10k/Rc + 10k
         7Rc + 70k = 10RcK
         Rc = 3Rc = 70 Rc = 23.3Kohms

         Choose R2 = 15kohms

         10 – Icq(34) -1 = (Icq –0.1)(7.6744)
         9 – 34Icq = 7.67(Icq – 0.1)
         9 – 34Icq = 7.67Icq – 0.767
         9 = 41.674Icq – 0.767
         9.767 = 41.674Icq
         Icq = 0.234mA
                                                                                      VII. COMPONENT LIST
         Icq + Icq/Beta = Ie                                         The following is a list of components that were used in
         Ie =0.234+( 0.234/200) Ie = 0.23517                       constructing the BJT amplifier from the giving specs in lab
         Ie (Vbe) = Vb Vb = (0.23517)(0.65)                          #3. Component values were selected by the professor.
         Vb = 0.885
                                                                             A digital multimeter for measuring circuit
         15k(10)/R1 + 15K = 0.885                                             voltages, resistor resistances, and capacitor
         150k = 0.885R1 + 13.275                                              capacitance.
         136.725 = 0.885R1                                                   A oscilloscope for viewing the input and output
         R1 = 154.49kohms                                                     waveforms of the circuit.
                                                                             A power supply capable of producing Vcc = 10V
         Ri = R1||R2||Rib                                                    A Pulse Generator capable of delivering input
         Rib = Rpi + (1 + Beta)Re                                             voltage of (100mV) and a signal at about 2Khz.
         Rib = 22.1 + (201)(1k) Rib = 223.1                                  A 2N3904 Transistor, V(BE) = .65V, Vt = 0.026V
                                                                              Beta (B) = 200
         Ri = 154.49||15||223.1                                              5 resistors RL = 10kohms, Rc = 23.2kohms,
         Ri = 12.88kohms                                                      (raised to 33kohms), Re = 1kohms, R1 =
                                                                              154.49kohms (raised to 160kohms) and R2 =
                                                                              15kohms.
                                                                             Two capacitors C1 and C2 = 0.1uF
                                                                             Bread board with wires.
                                                                             NOTE: Resistors can normally provide around +/-
                                                                              5%-25% difference between actual and designed
                                                                              values while Capacitors generally provide around
CTU: EE 375 – Electronics 1: Lab 3: BJT Amplifier                                                                             3

           20%-50% difference between actual and designed        Figure 3 is a graph of a Bode line. This is showing the FL
           values. You can add resisters in series as (R1+R2)    (Low Frequency Range and High Frequency Range)
           to closer approximate required resistance values
           and you can add Capacitors in parallel as (C1+C2)       Figure 4: BJT Circuit Schematic LT-Spice Simulation
           to closely approximate required capacitance.                              DC Bias Results

             VIII. PSPICE SIMULATION RESULTS
          The P-Spice simulation results below confirmed our
circuit schematics and allowed our team to confirm the circuit
digitally before performing the physical build.




   Figure 2: BJT Amplifier P-Spice Simulation Results
                  Voutput and Vinput
                                                                 Figure 5: BJT Amplifier Circuit Schematic Actual
                                                                 Experimental Results from Figure 1.
Key: Green line = Vout, Purple line = Vin

Scale: Vout ( Y – Axis) Range: -800mV to 800mV (400mV
increments)
       Vin (X – Axis) Range: 1.000s to 1.0045s (0.005s
increments)

PSpice results show that when Vin ranges from -100mV to
100mV. It is showing that Vin is 200mV peak-peak.

Vout = Pspice results show that Vout ranges from 667.466V
to -694.957V. Vout = 1.362mV. Which produces a gain of
6.81.




                                                                  The graph above is the actual experimental results. It shows
                                                                 that the Vpp voltage/200mv is appx the gain (Av). Rc and R1
                                                                      were raised to increased to achieve a close gain of 7.




    Figure 3: BJT Amplifier Circuit Schematic P-Spice
            Simulation Results from Figure 1.
CTU: EE 375 – Electronics 1: Lab 3: BJT Amplifier                               4

                      IX. EXPERIMENTAL DATA
The above diagram is the experimental data.
The change in the Vpp voltage alters between 1.35V and 1.38
depending on what resistor values were used. The gain is
approximately 7, according to this result Vpp/.2mV =
1.35/0.2.


               X. ANALYSIS/DATA COMPARISON

          The analysis/PSpice/Experimental data results were
all accurate, but the results differed between the three. The
reasons that the results were different is because the
experimental results have equipment calibrations, component
tolerances, and actual measures values from the components.
The PSpice results is a close estimate of what the results
showed actually be. For example figure 1 shows a graph of
what the output showed look like. And the actual results
verifies that to be true. The analysis is a good estimate of what
the PSpice results should be. If the PSpice results match the
analysis results, then it’s time to work on the actual lab. All
three were not in total, agreement however, the results were
close to each other, and can be proved by applying the PSpice
Results from Figure 1 to the experimental results.


                          XI. CONCLUSIONS
The DC Bias values that were calculated by hand are similar
to that of the P-Spice results. The results from the different
methods proves that the P-Spice and hand calculation are
correct.
          The measured characteristics closely matched those
in the specifications. A 2N3004 Transistor was used , a
requirement of a gain of 7 was closely achieved because we
obtained a gain of 6.89 from the actual experiment results. The
input resistance that had to be at least 12K was achieved
because the input resistance that we resulted in was
12.9Kohms. The signal was undistorted which is a
requirement for the lab. There was no clipping, or saturation.
Look at figure 5.
          This BJT Amplifier lab may be improved to achieve
a closer gain of 7 by altering Rc. Depending on the other
resistor values, whether or not to increase or decrease the
resistance value.

                         XII. ATTACHMENTS
           All figures above follow.


                              REFERENCES
[1]   D. A. Neamen, “Microelectronics: circuit analysis and design - 3rd ed.”
      McGraw-Hill, New York, NY, 2007. pp. 1-107.

Mais conteúdo relacionado

Mais procurados

Rf design and review guidelines
Rf design and review guidelinesRf design and review guidelines
Rf design and review guidelinesJOSE T Y
 
1.2V Over-voltage tolerant Analog I/O for TSMC 65nm technology
1.2V Over-voltage tolerant Analog I/O for TSMC 65nm technology1.2V Over-voltage tolerant Analog I/O for TSMC 65nm technology
1.2V Over-voltage tolerant Analog I/O for TSMC 65nm technologySofics
 
VVC tutorial at ICIP 2020 together with Benjamin Bross
VVC tutorial at ICIP 2020 together with Benjamin BrossVVC tutorial at ICIP 2020 together with Benjamin Bross
VVC tutorial at ICIP 2020 together with Benjamin BrossMathias Wien
 
Compensation Techniques
Compensation TechniquesCompensation Techniques
Compensation TechniquesPRAVEENA N G
 
Mos transistor
Mos transistorMos transistor
Mos transistorMurali Rai
 
lect5_Stick_diagram_layout_rules
lect5_Stick_diagram_layout_ruleslect5_Stick_diagram_layout_rules
lect5_Stick_diagram_layout_rulesvein
 
Ee321 lab expt 7_negative_feedback_in_ amplifiers
Ee321 lab expt 7_negative_feedback_in_ amplifiersEe321 lab expt 7_negative_feedback_in_ amplifiers
Ee321 lab expt 7_negative_feedback_in_ amplifierssagarchawla76
 
Modern broadcast camera techniques, set up & operation
Modern broadcast camera techniques, set up & operationModern broadcast camera techniques, set up & operation
Modern broadcast camera techniques, set up & operationDr. Mohieddin Moradi
 

Mais procurados (13)

Rf design and review guidelines
Rf design and review guidelinesRf design and review guidelines
Rf design and review guidelines
 
1.2V Over-voltage tolerant Analog I/O for TSMC 65nm technology
1.2V Over-voltage tolerant Analog I/O for TSMC 65nm technology1.2V Over-voltage tolerant Analog I/O for TSMC 65nm technology
1.2V Over-voltage tolerant Analog I/O for TSMC 65nm technology
 
VVC tutorial at ICIP 2020 together with Benjamin Bross
VVC tutorial at ICIP 2020 together with Benjamin BrossVVC tutorial at ICIP 2020 together with Benjamin Bross
VVC tutorial at ICIP 2020 together with Benjamin Bross
 
Compensation Techniques
Compensation TechniquesCompensation Techniques
Compensation Techniques
 
Mos transistor
Mos transistorMos transistor
Mos transistor
 
Ecl
EclEcl
Ecl
 
Marketing L12 Segmentazione
Marketing L12 SegmentazioneMarketing L12 Segmentazione
Marketing L12 Segmentazione
 
SDI to IP 2110 Transition Part 1
SDI to IP 2110 Transition Part 1SDI to IP 2110 Transition Part 1
SDI to IP 2110 Transition Part 1
 
multistage amplifier Rajendra keer
 multistage amplifier Rajendra keer multistage amplifier Rajendra keer
multistage amplifier Rajendra keer
 
lect5_Stick_diagram_layout_rules
lect5_Stick_diagram_layout_ruleslect5_Stick_diagram_layout_rules
lect5_Stick_diagram_layout_rules
 
Ee321 lab expt 7_negative_feedback_in_ amplifiers
Ee321 lab expt 7_negative_feedback_in_ amplifiersEe321 lab expt 7_negative_feedback_in_ amplifiers
Ee321 lab expt 7_negative_feedback_in_ amplifiers
 
VLSI-Module-3.pdf
VLSI-Module-3.pdfVLSI-Module-3.pdf
VLSI-Module-3.pdf
 
Modern broadcast camera techniques, set up & operation
Modern broadcast camera techniques, set up & operationModern broadcast camera techniques, set up & operation
Modern broadcast camera techniques, set up & operation
 

Semelhante a EE375 Electronics 1: lab 3

Bipolar junction transistor characterstics biassing and amplification, lab 9
Bipolar junction transistor characterstics biassing and amplification, lab 9Bipolar junction transistor characterstics biassing and amplification, lab 9
Bipolar junction transistor characterstics biassing and amplification, lab 9kehali Haileselassie
 
Bipolar junction transistor characterstics biassing and amplification, lab 9
Bipolar junction transistor characterstics biassing and amplification, lab 9Bipolar junction transistor characterstics biassing and amplification, lab 9
Bipolar junction transistor characterstics biassing and amplification, lab 9kehali Haileselassie
 
Design and simulation of high frequency colpitts oscillator based on BJT ampl...
Design and simulation of high frequency colpitts oscillator based on BJT ampl...Design and simulation of high frequency colpitts oscillator based on BJT ampl...
Design and simulation of high frequency colpitts oscillator based on BJT ampl...IJECEIAES
 
Ee395 lab 1 - bjt - loren - victor - taylor
Ee395   lab 1 - bjt - loren - victor - taylorEe395   lab 1 - bjt - loren - victor - taylor
Ee395 lab 1 - bjt - loren - victor - taylorLoren Schwappach
 
Experiment no 2 setb118
Experiment no 2    setb118Experiment no 2    setb118
Experiment no 2 setb118Omkar Rane
 
Ee395 lab 2 - loren - victor - taylor
Ee395   lab 2 - loren - victor - taylorEe395   lab 2 - loren - victor - taylor
Ee395 lab 2 - loren - victor - taylorLoren Schwappach
 
4 ee414 - adv electroncs - lab 3 - loren schwappach
4   ee414 - adv electroncs - lab 3 - loren schwappach4   ee414 - adv electroncs - lab 3 - loren schwappach
4 ee414 - adv electroncs - lab 3 - loren schwappachLoren Schwappach
 
BJT by Emroz Sardar.pptx
BJT by Emroz Sardar.pptxBJT by Emroz Sardar.pptx
BJT by Emroz Sardar.pptxEmroz Sardar
 
Study of Transistor Characteristics in Common Emitter Amplifier.pdf
Study of Transistor Characteristics in Common Emitter Amplifier.pdfStudy of Transistor Characteristics in Common Emitter Amplifier.pdf
Study of Transistor Characteristics in Common Emitter Amplifier.pdfMHSyam1
 
Single stage bjt amplifier. experiment 6
Single stage bjt amplifier. experiment 6Single stage bjt amplifier. experiment 6
Single stage bjt amplifier. experiment 6Karimi LordRamza
 
EN1072 Laboratory.docx
EN1072 Laboratory.docxEN1072 Laboratory.docx
EN1072 Laboratory.docx4934bk
 
Oscillator Circuit using Multisim Software
Oscillator Circuit using Multisim SoftwareOscillator Circuit using Multisim Software
Oscillator Circuit using Multisim Softwarerishiteta
 
Bipolar Junction Transistor Experimental Aims To meaningfully interpret the.pdf
Bipolar Junction Transistor Experimental Aims To meaningfully interpret the.pdfBipolar Junction Transistor Experimental Aims To meaningfully interpret the.pdf
Bipolar Junction Transistor Experimental Aims To meaningfully interpret the.pdfstudywriters
 
EECE_3120_Lab_01_Alternate (1) (2).pdf
EECE_3120_Lab_01_Alternate (1) (2).pdfEECE_3120_Lab_01_Alternate (1) (2).pdf
EECE_3120_Lab_01_Alternate (1) (2).pdfAlexisPozo9
 
Basic electronics - Bi Junction Terminals 01.pptx
Basic electronics - Bi Junction Terminals 01.pptxBasic electronics - Bi Junction Terminals 01.pptx
Basic electronics - Bi Junction Terminals 01.pptxhappycocoman
 
EC 2 lab manual with circulits
EC 2 lab manual with circulitsEC 2 lab manual with circulits
EC 2 lab manual with circulitsMurugan Dhandapani
 

Semelhante a EE375 Electronics 1: lab 3 (20)

Bipolar junction transistor characterstics biassing and amplification, lab 9
Bipolar junction transistor characterstics biassing and amplification, lab 9Bipolar junction transistor characterstics biassing and amplification, lab 9
Bipolar junction transistor characterstics biassing and amplification, lab 9
 
Bipolar junction transistor characterstics biassing and amplification, lab 9
Bipolar junction transistor characterstics biassing and amplification, lab 9Bipolar junction transistor characterstics biassing and amplification, lab 9
Bipolar junction transistor characterstics biassing and amplification, lab 9
 
Design and simulation of high frequency colpitts oscillator based on BJT ampl...
Design and simulation of high frequency colpitts oscillator based on BJT ampl...Design and simulation of high frequency colpitts oscillator based on BJT ampl...
Design and simulation of high frequency colpitts oscillator based on BJT ampl...
 
Ee395 lab 1 - bjt - loren - victor - taylor
Ee395   lab 1 - bjt - loren - victor - taylorEe395   lab 1 - bjt - loren - victor - taylor
Ee395 lab 1 - bjt - loren - victor - taylor
 
Experiment no 2 setb118
Experiment no 2    setb118Experiment no 2    setb118
Experiment no 2 setb118
 
Ee395 lab 2 - loren - victor - taylor
Ee395   lab 2 - loren - victor - taylorEe395   lab 2 - loren - victor - taylor
Ee395 lab 2 - loren - victor - taylor
 
4 ee414 - adv electroncs - lab 3 - loren schwappach
4   ee414 - adv electroncs - lab 3 - loren schwappach4   ee414 - adv electroncs - lab 3 - loren schwappach
4 ee414 - adv electroncs - lab 3 - loren schwappach
 
Review paper
Review paperReview paper
Review paper
 
BJT by Emroz Sardar.pptx
BJT by Emroz Sardar.pptxBJT by Emroz Sardar.pptx
BJT by Emroz Sardar.pptx
 
Study of Transistor Characteristics in Common Emitter Amplifier.pdf
Study of Transistor Characteristics in Common Emitter Amplifier.pdfStudy of Transistor Characteristics in Common Emitter Amplifier.pdf
Study of Transistor Characteristics in Common Emitter Amplifier.pdf
 
Single stage bjt amplifier. experiment 6
Single stage bjt amplifier. experiment 6Single stage bjt amplifier. experiment 6
Single stage bjt amplifier. experiment 6
 
Gopi 1 lab manual
Gopi 1 lab manualGopi 1 lab manual
Gopi 1 lab manual
 
Chp1 1 bjt [read only]
Chp1 1 bjt [read only]Chp1 1 bjt [read only]
Chp1 1 bjt [read only]
 
EN1072 Laboratory.docx
EN1072 Laboratory.docxEN1072 Laboratory.docx
EN1072 Laboratory.docx
 
Oscillator Circuit using Multisim Software
Oscillator Circuit using Multisim SoftwareOscillator Circuit using Multisim Software
Oscillator Circuit using Multisim Software
 
Ece
EceEce
Ece
 
Bipolar Junction Transistor Experimental Aims To meaningfully interpret the.pdf
Bipolar Junction Transistor Experimental Aims To meaningfully interpret the.pdfBipolar Junction Transistor Experimental Aims To meaningfully interpret the.pdf
Bipolar Junction Transistor Experimental Aims To meaningfully interpret the.pdf
 
EECE_3120_Lab_01_Alternate (1) (2).pdf
EECE_3120_Lab_01_Alternate (1) (2).pdfEECE_3120_Lab_01_Alternate (1) (2).pdf
EECE_3120_Lab_01_Alternate (1) (2).pdf
 
Basic electronics - Bi Junction Terminals 01.pptx
Basic electronics - Bi Junction Terminals 01.pptxBasic electronics - Bi Junction Terminals 01.pptx
Basic electronics - Bi Junction Terminals 01.pptx
 
EC 2 lab manual with circulits
EC 2 lab manual with circulitsEC 2 lab manual with circulits
EC 2 lab manual with circulits
 

Mais de Loren Schwappach

EE312 Embedded Microcontrollers Lab
EE312 Embedded Microcontrollers LabEE312 Embedded Microcontrollers Lab
EE312 Embedded Microcontrollers LabLoren Schwappach
 
Ee325 cmos design lab 7 report - loren k schwappach
Ee325 cmos design   lab 7 report - loren k schwappachEe325 cmos design   lab 7 report - loren k schwappach
Ee325 cmos design lab 7 report - loren k schwappachLoren Schwappach
 
Ee325 cmos design lab 6 report - loren k schwappach
Ee325 cmos design   lab 6 report - loren k schwappachEe325 cmos design   lab 6 report - loren k schwappach
Ee325 cmos design lab 6 report - loren k schwappachLoren Schwappach
 
Ee325 cmos design lab 5 report - loren k schwappach
Ee325 cmos design   lab 5 report - loren k schwappachEe325 cmos design   lab 5 report - loren k schwappach
Ee325 cmos design lab 5 report - loren k schwappachLoren Schwappach
 
Ee325 cmos design lab 4 report - loren k schwappach
Ee325 cmos design   lab 4 report - loren k schwappachEe325 cmos design   lab 4 report - loren k schwappach
Ee325 cmos design lab 4 report - loren k schwappachLoren Schwappach
 
Ee325 cmos design lab 3 report - loren k schwappach
Ee325 cmos design   lab 3 report - loren k schwappachEe325 cmos design   lab 3 report - loren k schwappach
Ee325 cmos design lab 3 report - loren k schwappachLoren Schwappach
 
Loren k. schwappach ee331 - lab 4
Loren k. schwappach   ee331 - lab 4Loren k. schwappach   ee331 - lab 4
Loren k. schwappach ee331 - lab 4Loren Schwappach
 
Loren k. schwappach ee331 - lab 3
Loren k. schwappach   ee331 - lab 3Loren k. schwappach   ee331 - lab 3
Loren k. schwappach ee331 - lab 3Loren Schwappach
 
Ee343 signals and systems - lab 2 - loren schwappach
Ee343   signals and systems - lab 2 - loren schwappachEe343   signals and systems - lab 2 - loren schwappach
Ee343 signals and systems - lab 2 - loren schwappachLoren Schwappach
 
Ee343 signals and systems - lab 1 - loren schwappach
Ee343   signals and systems - lab 1 - loren schwappachEe343   signals and systems - lab 1 - loren schwappach
Ee343 signals and systems - lab 1 - loren schwappachLoren Schwappach
 
Ee 352 lab 1 (tutorial) - schwappach - 15 oct 09
Ee 352   lab 1 (tutorial) - schwappach - 15 oct 09Ee 352   lab 1 (tutorial) - schwappach - 15 oct 09
Ee 352 lab 1 (tutorial) - schwappach - 15 oct 09Loren Schwappach
 
EE375 Electronics 1: lab 1
EE375   Electronics 1: lab 1EE375   Electronics 1: lab 1
EE375 Electronics 1: lab 1Loren Schwappach
 
5 ee415 - adv electronics - presentation - schwappach
5   ee415 - adv electronics - presentation - schwappach5   ee415 - adv electronics - presentation - schwappach
5 ee415 - adv electronics - presentation - schwappachLoren Schwappach
 
3 ee414 - adv electroncs - lab 2 - loren schwappach
3   ee414 - adv electroncs - lab 2 - loren schwappach3   ee414 - adv electroncs - lab 2 - loren schwappach
3 ee414 - adv electroncs - lab 2 - loren schwappachLoren Schwappach
 
2 ee414 - adv electroncs - lab 1 - loren schwappach
2   ee414 - adv electroncs - lab 1 - loren schwappach2   ee414 - adv electroncs - lab 1 - loren schwappach
2 ee414 - adv electroncs - lab 1 - loren schwappachLoren Schwappach
 
Ee443 phase locked loop - presentation - schwappach and brandy
Ee443   phase locked loop - presentation - schwappach and brandyEe443   phase locked loop - presentation - schwappach and brandy
Ee443 phase locked loop - presentation - schwappach and brandyLoren Schwappach
 
Ee443 phase locked loop - paper - schwappach and brandy
Ee443   phase locked loop - paper - schwappach and brandyEe443   phase locked loop - paper - schwappach and brandy
Ee443 phase locked loop - paper - schwappach and brandyLoren Schwappach
 
EE443 - Communications 1 - Lab 3 - Loren Schwappach.pdf
EE443 - Communications 1 - Lab 3 - Loren Schwappach.pdfEE443 - Communications 1 - Lab 3 - Loren Schwappach.pdf
EE443 - Communications 1 - Lab 3 - Loren Schwappach.pdfLoren Schwappach
 
Ee443 communications 1 - lab 2 - loren schwappach
Ee443   communications 1 - lab 2 - loren schwappachEe443   communications 1 - lab 2 - loren schwappach
Ee443 communications 1 - lab 2 - loren schwappachLoren Schwappach
 

Mais de Loren Schwappach (20)

Ubuntu OS Presentation
Ubuntu OS PresentationUbuntu OS Presentation
Ubuntu OS Presentation
 
EE312 Embedded Microcontrollers Lab
EE312 Embedded Microcontrollers LabEE312 Embedded Microcontrollers Lab
EE312 Embedded Microcontrollers Lab
 
Ee325 cmos design lab 7 report - loren k schwappach
Ee325 cmos design   lab 7 report - loren k schwappachEe325 cmos design   lab 7 report - loren k schwappach
Ee325 cmos design lab 7 report - loren k schwappach
 
Ee325 cmos design lab 6 report - loren k schwappach
Ee325 cmos design   lab 6 report - loren k schwappachEe325 cmos design   lab 6 report - loren k schwappach
Ee325 cmos design lab 6 report - loren k schwappach
 
Ee325 cmos design lab 5 report - loren k schwappach
Ee325 cmos design   lab 5 report - loren k schwappachEe325 cmos design   lab 5 report - loren k schwappach
Ee325 cmos design lab 5 report - loren k schwappach
 
Ee325 cmos design lab 4 report - loren k schwappach
Ee325 cmos design   lab 4 report - loren k schwappachEe325 cmos design   lab 4 report - loren k schwappach
Ee325 cmos design lab 4 report - loren k schwappach
 
Ee325 cmos design lab 3 report - loren k schwappach
Ee325 cmos design   lab 3 report - loren k schwappachEe325 cmos design   lab 3 report - loren k schwappach
Ee325 cmos design lab 3 report - loren k schwappach
 
Loren k. schwappach ee331 - lab 4
Loren k. schwappach   ee331 - lab 4Loren k. schwappach   ee331 - lab 4
Loren k. schwappach ee331 - lab 4
 
Loren k. schwappach ee331 - lab 3
Loren k. schwappach   ee331 - lab 3Loren k. schwappach   ee331 - lab 3
Loren k. schwappach ee331 - lab 3
 
Ee343 signals and systems - lab 2 - loren schwappach
Ee343   signals and systems - lab 2 - loren schwappachEe343   signals and systems - lab 2 - loren schwappach
Ee343 signals and systems - lab 2 - loren schwappach
 
Ee343 signals and systems - lab 1 - loren schwappach
Ee343   signals and systems - lab 1 - loren schwappachEe343   signals and systems - lab 1 - loren schwappach
Ee343 signals and systems - lab 1 - loren schwappach
 
Ee 352 lab 1 (tutorial) - schwappach - 15 oct 09
Ee 352   lab 1 (tutorial) - schwappach - 15 oct 09Ee 352   lab 1 (tutorial) - schwappach - 15 oct 09
Ee 352 lab 1 (tutorial) - schwappach - 15 oct 09
 
EE375 Electronics 1: lab 1
EE375   Electronics 1: lab 1EE375   Electronics 1: lab 1
EE375 Electronics 1: lab 1
 
5 ee415 - adv electronics - presentation - schwappach
5   ee415 - adv electronics - presentation - schwappach5   ee415 - adv electronics - presentation - schwappach
5 ee415 - adv electronics - presentation - schwappach
 
3 ee414 - adv electroncs - lab 2 - loren schwappach
3   ee414 - adv electroncs - lab 2 - loren schwappach3   ee414 - adv electroncs - lab 2 - loren schwappach
3 ee414 - adv electroncs - lab 2 - loren schwappach
 
2 ee414 - adv electroncs - lab 1 - loren schwappach
2   ee414 - adv electroncs - lab 1 - loren schwappach2   ee414 - adv electroncs - lab 1 - loren schwappach
2 ee414 - adv electroncs - lab 1 - loren schwappach
 
Ee443 phase locked loop - presentation - schwappach and brandy
Ee443   phase locked loop - presentation - schwappach and brandyEe443   phase locked loop - presentation - schwappach and brandy
Ee443 phase locked loop - presentation - schwappach and brandy
 
Ee443 phase locked loop - paper - schwappach and brandy
Ee443   phase locked loop - paper - schwappach and brandyEe443   phase locked loop - paper - schwappach and brandy
Ee443 phase locked loop - paper - schwappach and brandy
 
EE443 - Communications 1 - Lab 3 - Loren Schwappach.pdf
EE443 - Communications 1 - Lab 3 - Loren Schwappach.pdfEE443 - Communications 1 - Lab 3 - Loren Schwappach.pdf
EE443 - Communications 1 - Lab 3 - Loren Schwappach.pdf
 
Ee443 communications 1 - lab 2 - loren schwappach
Ee443   communications 1 - lab 2 - loren schwappachEe443   communications 1 - lab 2 - loren schwappach
Ee443 communications 1 - lab 2 - loren schwappach
 

Último

UiPath Studio Web workshop series - Day 7
UiPath Studio Web workshop series - Day 7UiPath Studio Web workshop series - Day 7
UiPath Studio Web workshop series - Day 7DianaGray10
 
Computer 10: Lesson 10 - Online Crimes and Hazards
Computer 10: Lesson 10 - Online Crimes and HazardsComputer 10: Lesson 10 - Online Crimes and Hazards
Computer 10: Lesson 10 - Online Crimes and HazardsSeth Reyes
 
KubeConEU24-Monitoring Kubernetes and Cloud Spend with OpenCost
KubeConEU24-Monitoring Kubernetes and Cloud Spend with OpenCostKubeConEU24-Monitoring Kubernetes and Cloud Spend with OpenCost
KubeConEU24-Monitoring Kubernetes and Cloud Spend with OpenCostMatt Ray
 
COMPUTER 10: Lesson 7 - File Storage and Online Collaboration
COMPUTER 10: Lesson 7 - File Storage and Online CollaborationCOMPUTER 10: Lesson 7 - File Storage and Online Collaboration
COMPUTER 10: Lesson 7 - File Storage and Online Collaborationbruanjhuli
 
UiPath Studio Web workshop series - Day 6
UiPath Studio Web workshop series - Day 6UiPath Studio Web workshop series - Day 6
UiPath Studio Web workshop series - Day 6DianaGray10
 
Secure your environment with UiPath and CyberArk technologies - Session 1
Secure your environment with UiPath and CyberArk technologies - Session 1Secure your environment with UiPath and CyberArk technologies - Session 1
Secure your environment with UiPath and CyberArk technologies - Session 1DianaGray10
 
COMPUTER 10 Lesson 8 - Building a Website
COMPUTER 10 Lesson 8 - Building a WebsiteCOMPUTER 10 Lesson 8 - Building a Website
COMPUTER 10 Lesson 8 - Building a Websitedgelyza
 
How Accurate are Carbon Emissions Projections?
How Accurate are Carbon Emissions Projections?How Accurate are Carbon Emissions Projections?
How Accurate are Carbon Emissions Projections?IES VE
 
Crea il tuo assistente AI con lo Stregatto (open source python framework)
Crea il tuo assistente AI con lo Stregatto (open source python framework)Crea il tuo assistente AI con lo Stregatto (open source python framework)
Crea il tuo assistente AI con lo Stregatto (open source python framework)Commit University
 
NIST Cybersecurity Framework (CSF) 2.0 Workshop
NIST Cybersecurity Framework (CSF) 2.0 WorkshopNIST Cybersecurity Framework (CSF) 2.0 Workshop
NIST Cybersecurity Framework (CSF) 2.0 WorkshopBachir Benyammi
 
Anypoint Code Builder , Google Pub sub connector and MuleSoft RPA
Anypoint Code Builder , Google Pub sub connector and MuleSoft RPAAnypoint Code Builder , Google Pub sub connector and MuleSoft RPA
Anypoint Code Builder , Google Pub sub connector and MuleSoft RPAshyamraj55
 
Comparing Sidecar-less Service Mesh from Cilium and Istio
Comparing Sidecar-less Service Mesh from Cilium and IstioComparing Sidecar-less Service Mesh from Cilium and Istio
Comparing Sidecar-less Service Mesh from Cilium and IstioChristian Posta
 
ADOPTING WEB 3 FOR YOUR BUSINESS: A STEP-BY-STEP GUIDE
ADOPTING WEB 3 FOR YOUR BUSINESS: A STEP-BY-STEP GUIDEADOPTING WEB 3 FOR YOUR BUSINESS: A STEP-BY-STEP GUIDE
ADOPTING WEB 3 FOR YOUR BUSINESS: A STEP-BY-STEP GUIDELiveplex
 
Using IESVE for Loads, Sizing and Heat Pump Modeling to Achieve Decarbonization
Using IESVE for Loads, Sizing and Heat Pump Modeling to Achieve DecarbonizationUsing IESVE for Loads, Sizing and Heat Pump Modeling to Achieve Decarbonization
Using IESVE for Loads, Sizing and Heat Pump Modeling to Achieve DecarbonizationIES VE
 
Introduction to Matsuo Laboratory (ENG).pptx
Introduction to Matsuo Laboratory (ENG).pptxIntroduction to Matsuo Laboratory (ENG).pptx
Introduction to Matsuo Laboratory (ENG).pptxMatsuo Lab
 
Building AI-Driven Apps Using Semantic Kernel.pptx
Building AI-Driven Apps Using Semantic Kernel.pptxBuilding AI-Driven Apps Using Semantic Kernel.pptx
Building AI-Driven Apps Using Semantic Kernel.pptxUdaiappa Ramachandran
 
OpenShift Commons Paris - Choose Your Own Observability Adventure
OpenShift Commons Paris - Choose Your Own Observability AdventureOpenShift Commons Paris - Choose Your Own Observability Adventure
OpenShift Commons Paris - Choose Your Own Observability AdventureEric D. Schabell
 
Artificial Intelligence & SEO Trends for 2024
Artificial Intelligence & SEO Trends for 2024Artificial Intelligence & SEO Trends for 2024
Artificial Intelligence & SEO Trends for 2024D Cloud Solutions
 

Último (20)

UiPath Studio Web workshop series - Day 7
UiPath Studio Web workshop series - Day 7UiPath Studio Web workshop series - Day 7
UiPath Studio Web workshop series - Day 7
 
Computer 10: Lesson 10 - Online Crimes and Hazards
Computer 10: Lesson 10 - Online Crimes and HazardsComputer 10: Lesson 10 - Online Crimes and Hazards
Computer 10: Lesson 10 - Online Crimes and Hazards
 
KubeConEU24-Monitoring Kubernetes and Cloud Spend with OpenCost
KubeConEU24-Monitoring Kubernetes and Cloud Spend with OpenCostKubeConEU24-Monitoring Kubernetes and Cloud Spend with OpenCost
KubeConEU24-Monitoring Kubernetes and Cloud Spend with OpenCost
 
20150722 - AGV
20150722 - AGV20150722 - AGV
20150722 - AGV
 
COMPUTER 10: Lesson 7 - File Storage and Online Collaboration
COMPUTER 10: Lesson 7 - File Storage and Online CollaborationCOMPUTER 10: Lesson 7 - File Storage and Online Collaboration
COMPUTER 10: Lesson 7 - File Storage and Online Collaboration
 
UiPath Studio Web workshop series - Day 6
UiPath Studio Web workshop series - Day 6UiPath Studio Web workshop series - Day 6
UiPath Studio Web workshop series - Day 6
 
Secure your environment with UiPath and CyberArk technologies - Session 1
Secure your environment with UiPath and CyberArk technologies - Session 1Secure your environment with UiPath and CyberArk technologies - Session 1
Secure your environment with UiPath and CyberArk technologies - Session 1
 
COMPUTER 10 Lesson 8 - Building a Website
COMPUTER 10 Lesson 8 - Building a WebsiteCOMPUTER 10 Lesson 8 - Building a Website
COMPUTER 10 Lesson 8 - Building a Website
 
How Accurate are Carbon Emissions Projections?
How Accurate are Carbon Emissions Projections?How Accurate are Carbon Emissions Projections?
How Accurate are Carbon Emissions Projections?
 
Crea il tuo assistente AI con lo Stregatto (open source python framework)
Crea il tuo assistente AI con lo Stregatto (open source python framework)Crea il tuo assistente AI con lo Stregatto (open source python framework)
Crea il tuo assistente AI con lo Stregatto (open source python framework)
 
NIST Cybersecurity Framework (CSF) 2.0 Workshop
NIST Cybersecurity Framework (CSF) 2.0 WorkshopNIST Cybersecurity Framework (CSF) 2.0 Workshop
NIST Cybersecurity Framework (CSF) 2.0 Workshop
 
201610817 - edge part1
201610817 - edge part1201610817 - edge part1
201610817 - edge part1
 
Anypoint Code Builder , Google Pub sub connector and MuleSoft RPA
Anypoint Code Builder , Google Pub sub connector and MuleSoft RPAAnypoint Code Builder , Google Pub sub connector and MuleSoft RPA
Anypoint Code Builder , Google Pub sub connector and MuleSoft RPA
 
Comparing Sidecar-less Service Mesh from Cilium and Istio
Comparing Sidecar-less Service Mesh from Cilium and IstioComparing Sidecar-less Service Mesh from Cilium and Istio
Comparing Sidecar-less Service Mesh from Cilium and Istio
 
ADOPTING WEB 3 FOR YOUR BUSINESS: A STEP-BY-STEP GUIDE
ADOPTING WEB 3 FOR YOUR BUSINESS: A STEP-BY-STEP GUIDEADOPTING WEB 3 FOR YOUR BUSINESS: A STEP-BY-STEP GUIDE
ADOPTING WEB 3 FOR YOUR BUSINESS: A STEP-BY-STEP GUIDE
 
Using IESVE for Loads, Sizing and Heat Pump Modeling to Achieve Decarbonization
Using IESVE for Loads, Sizing and Heat Pump Modeling to Achieve DecarbonizationUsing IESVE for Loads, Sizing and Heat Pump Modeling to Achieve Decarbonization
Using IESVE for Loads, Sizing and Heat Pump Modeling to Achieve Decarbonization
 
Introduction to Matsuo Laboratory (ENG).pptx
Introduction to Matsuo Laboratory (ENG).pptxIntroduction to Matsuo Laboratory (ENG).pptx
Introduction to Matsuo Laboratory (ENG).pptx
 
Building AI-Driven Apps Using Semantic Kernel.pptx
Building AI-Driven Apps Using Semantic Kernel.pptxBuilding AI-Driven Apps Using Semantic Kernel.pptx
Building AI-Driven Apps Using Semantic Kernel.pptx
 
OpenShift Commons Paris - Choose Your Own Observability Adventure
OpenShift Commons Paris - Choose Your Own Observability AdventureOpenShift Commons Paris - Choose Your Own Observability Adventure
OpenShift Commons Paris - Choose Your Own Observability Adventure
 
Artificial Intelligence & SEO Trends for 2024
Artificial Intelligence & SEO Trends for 2024Artificial Intelligence & SEO Trends for 2024
Artificial Intelligence & SEO Trends for 2024
 

EE375 Electronics 1: lab 3

  • 1. CTU: EE 375 – Electronics 1: Lab 3: BJT Amplifier 1 Colorado Technical University EE 375 – Electronics 1 Lab 3: BJT Amplifier March 2010 L. Schwappach and C. Fresch ABSTRACT: This lab report was completed as a course requirement to obtain full course credit in EE375, Electronics 1 at Colorado Technical University. This lab report examines the Bipolar Junction Transistors Amplifiers. This device is used in many applications such as amplifying and switching. This lab will focus on the gain, input/output resistance and the frequency bandwidth using a common emitter circuit. In particular how to achieve a gain of 7 with the selected load resistance of 10kohm and how to obtain the Re, Rc,R1,and R2. If you have any questions or concerns in regards to this laboratory assignment, this laboratory report, the process used in designing the indicated circuitry, or the final conclusions and recommendations derived, please send an email to LSchwappach@yahoo.com or cfresch24@comcast.net. All computer drawn figures and pictures used in this report are of original and authentic content. The authors authorize the use of any and all content included in this report for academic use. collector, and so BJTs are classified as minority-carrier devices. I. INTRODUCTION The proportion of electrons able to cross the base and reach the collector is a measure of the BJT efficiency. The T HE Bipolar-Junction-Transistors-Amplifiers are active devices used in many applications such as heavy doping of the emitter region and light doping of the base region cause many more electrons to be injected from the switching and amplifying and etc. The DC biasing determines the operating point of the device and its performance emitter into the base than holes to be injected from the base characteristics. The BJT transistor structure contains three into the emitter. The common-emitter current gain is regions, the emitter, base and collector. The objective of this represented by β; it is approximately the ratio of the DC lab is to design and gain a understanding of how an amplifier collector current to the DC base current in forward-active can be built by using a BJT. region. It is typically greater than 100 for small-signal transistors but can be smaller in transistors designed for high- power applications. Another important parameter is the II. OBJECTIVES common-base current gain, α. The common-base current gain is approximately the gain of current from emitter to collector The objective of this lab is to design and gain an in the forward-active region. This ratio usually has a value understanding of the physical structure, operation, and close to unity; between 0.98 and 0.998. Alpha and beta are characteristics of the bipolar junction transistors (BJT). In more precisely related by the following identities (NPN particular how to determine the gain, input resistance, output transistor): resistance, and the frequency bandwidth of the amplifier by simulation, hand calculations, actual measurement. The last objective is to recognize the discrepancies between the three and why they may differ from each-other. III. DIODE THEORY A bipolar (junction) transistor (BJT) is a three- terminal electronic device constructed of doped semiconductor material and may be used in amplifying or switching applications. Bipolar transistors are so named because their operation involves both electrons and holes. Charge flow in a BJT is due to bidirectional diffusion of charge carriers across a IV. DESIGN APPROACHES/TRADE-OFFS junction between two regions of different charge The performance of this lab will depend on how well concentrations. This mode of operation is contrasted with the circuit is developed. If the circuit is developed correctly unipolar transistors, such as field-effect transistors, in which the results should be similar to the simulation results that were only one carrier type is involved in charge flow due to drift. obtained by PSpice and the hand calculations (analysis). The By design, most of the BJT collector current is due to the flow performance of the lab also depends on how well the of charges injected from a high-concentration emitter into the equipment is calibrated and accurate the components tolerance base where they are minority carriers that diffuse toward the is.
  • 2. CTU: EE 375 – Electronics 1: Lab 3: BJT Amplifier 2 This is not a very cost effective lab except for the VI. CIRCUIT SCHEMATICS development and time it took to construct the lab components. The circuit schematics below were built in PSpice But to save money for a lab project, whether it’s the testing or and allowed our team to analyze the circuit digitally before developing phase of a new design, depending on what the performing the physical build. schematic is, a circuit can be reduced, if done correctly. Figure 1: BJT LT-Spice diagram showing Common Emitter Circuit for EE-375 Lab #3 V. HAND CALCULATIONS The hand calculations used for this lab (See figure 1) can be found below. Equations: -Rc||Rl/Re = Av Ri = R1||R2||Rib Rib = Rpi + (1+Beta)Re Rpi = Beta(Vt)/Icq AV = 7, choose Re = 1kohms 7 = Rc||RL/Re 7 = Rc||10k/Rc + 10k 7Rc + 70k = 10RcK Rc = 3Rc = 70 Rc = 23.3Kohms Choose R2 = 15kohms 10 – Icq(34) -1 = (Icq –0.1)(7.6744) 9 – 34Icq = 7.67(Icq – 0.1) 9 – 34Icq = 7.67Icq – 0.767 9 = 41.674Icq – 0.767 9.767 = 41.674Icq Icq = 0.234mA VII. COMPONENT LIST Icq + Icq/Beta = Ie The following is a list of components that were used in Ie =0.234+( 0.234/200) Ie = 0.23517 constructing the BJT amplifier from the giving specs in lab Ie (Vbe) = Vb Vb = (0.23517)(0.65) #3. Component values were selected by the professor. Vb = 0.885  A digital multimeter for measuring circuit 15k(10)/R1 + 15K = 0.885 voltages, resistor resistances, and capacitor 150k = 0.885R1 + 13.275 capacitance. 136.725 = 0.885R1  A oscilloscope for viewing the input and output R1 = 154.49kohms waveforms of the circuit.  A power supply capable of producing Vcc = 10V Ri = R1||R2||Rib  A Pulse Generator capable of delivering input Rib = Rpi + (1 + Beta)Re voltage of (100mV) and a signal at about 2Khz. Rib = 22.1 + (201)(1k) Rib = 223.1  A 2N3904 Transistor, V(BE) = .65V, Vt = 0.026V Beta (B) = 200 Ri = 154.49||15||223.1  5 resistors RL = 10kohms, Rc = 23.2kohms, Ri = 12.88kohms (raised to 33kohms), Re = 1kohms, R1 = 154.49kohms (raised to 160kohms) and R2 = 15kohms.  Two capacitors C1 and C2 = 0.1uF  Bread board with wires.  NOTE: Resistors can normally provide around +/- 5%-25% difference between actual and designed values while Capacitors generally provide around
  • 3. CTU: EE 375 – Electronics 1: Lab 3: BJT Amplifier 3 20%-50% difference between actual and designed Figure 3 is a graph of a Bode line. This is showing the FL values. You can add resisters in series as (R1+R2) (Low Frequency Range and High Frequency Range) to closer approximate required resistance values and you can add Capacitors in parallel as (C1+C2) Figure 4: BJT Circuit Schematic LT-Spice Simulation to closely approximate required capacitance. DC Bias Results VIII. PSPICE SIMULATION RESULTS The P-Spice simulation results below confirmed our circuit schematics and allowed our team to confirm the circuit digitally before performing the physical build. Figure 2: BJT Amplifier P-Spice Simulation Results Voutput and Vinput Figure 5: BJT Amplifier Circuit Schematic Actual Experimental Results from Figure 1. Key: Green line = Vout, Purple line = Vin Scale: Vout ( Y – Axis) Range: -800mV to 800mV (400mV increments) Vin (X – Axis) Range: 1.000s to 1.0045s (0.005s increments) PSpice results show that when Vin ranges from -100mV to 100mV. It is showing that Vin is 200mV peak-peak. Vout = Pspice results show that Vout ranges from 667.466V to -694.957V. Vout = 1.362mV. Which produces a gain of 6.81. The graph above is the actual experimental results. It shows that the Vpp voltage/200mv is appx the gain (Av). Rc and R1 were raised to increased to achieve a close gain of 7. Figure 3: BJT Amplifier Circuit Schematic P-Spice Simulation Results from Figure 1.
  • 4. CTU: EE 375 – Electronics 1: Lab 3: BJT Amplifier 4 IX. EXPERIMENTAL DATA The above diagram is the experimental data. The change in the Vpp voltage alters between 1.35V and 1.38 depending on what resistor values were used. The gain is approximately 7, according to this result Vpp/.2mV = 1.35/0.2. X. ANALYSIS/DATA COMPARISON The analysis/PSpice/Experimental data results were all accurate, but the results differed between the three. The reasons that the results were different is because the experimental results have equipment calibrations, component tolerances, and actual measures values from the components. The PSpice results is a close estimate of what the results showed actually be. For example figure 1 shows a graph of what the output showed look like. And the actual results verifies that to be true. The analysis is a good estimate of what the PSpice results should be. If the PSpice results match the analysis results, then it’s time to work on the actual lab. All three were not in total, agreement however, the results were close to each other, and can be proved by applying the PSpice Results from Figure 1 to the experimental results. XI. CONCLUSIONS The DC Bias values that were calculated by hand are similar to that of the P-Spice results. The results from the different methods proves that the P-Spice and hand calculation are correct. The measured characteristics closely matched those in the specifications. A 2N3004 Transistor was used , a requirement of a gain of 7 was closely achieved because we obtained a gain of 6.89 from the actual experiment results. The input resistance that had to be at least 12K was achieved because the input resistance that we resulted in was 12.9Kohms. The signal was undistorted which is a requirement for the lab. There was no clipping, or saturation. Look at figure 5. This BJT Amplifier lab may be improved to achieve a closer gain of 7 by altering Rc. Depending on the other resistor values, whether or not to increase or decrease the resistance value. XII. ATTACHMENTS All figures above follow. REFERENCES [1] D. A. Neamen, “Microelectronics: circuit analysis and design - 3rd ed.” McGraw-Hill, New York, NY, 2007. pp. 1-107.