1. TRANSISTORES
Información de la ficha técnica de cinco transistores
diferentes, incluye uno JFET y un MOSFET.

3. 2N3055(NPN), MJ2955(PNP)
Preferred Device
Complementary Silicon
Power Transistors
• DC Current Gain − hFE = 20−70 @ IC = 4 Adc
• Collector−Emitter Saturation Voltage −
VCE( sat ) = 1.1 Vdc (Max) @ IC = 4 Adc
• Excellent Safe Operating Area
• Pb−Free Packages are Available*

4. • High Voltage: BC546, VCEO=65V
• Low Noise: BC549, BC550
• Complement to BC556 ... BC560

5. ..400 MHz
.28 VOLTS
.EFFICIENCY 60%
.COMMON EMITTER
.GOLD METALLIZATION POUT = 125 W MIN.
WITH 7.0 dB GAIN

6. N- Channel Power MOS FET
DMOS Structure
Low On-State Resistance : 0.05Ω (max)
Ultra High- Speed Switching
SOT-89 Package
Gate Protect Diode Built-in